Equipment Information

• Internal Name: ICP2

Description

The inductively coupled plasma reactive ion etching system has the capability to etch III-V materials, including InP, GaAs, GaN using fluorinated and chlorinated chemistries.   The system can be configured to process small pieces up to 200mm wafers.   Process gases include Cl2, BCl3, HBr, SF6, C4F8, CHF3, O2, N2, Ar, The temperature range is from -150 to 400C allowing for flexible processing conditions to optimise requirements.   The high density reactive species at low at low pressures achieve high etch rates with low selectivity, excellent uniformity with clean smooth vertical profiles and etch surfaces.  Laser endpoint detection used for precise targeting.